Datasheet K4S161622D Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	K4S161622D	512K x 16Bit x 2 Banks Synchronous DRAM K4S161622D 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES • • • • 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) Al	Samsung semiconductor

K4S1616 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
K4S161622D	512K x 16Bit x 2 Banks Synchronous DRAM K4S161622D 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES • • • • 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequent	Samsung semiconductor
K4S161622H-TC60	16Mb H-die SDRAM Specification SDRAM 16Mb H-die(x16) CMOS SDRAM 16Mb H-die SDRAM Specification Revision 1.5 August 2004 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 August 2004 SDRAM 16Mb H-die(x16) Revision History Revision 0.0 (May, 2003) - Target	Samsung semiconductor
K4S161622E-TC60	1M x 16 SDRAM K4S161622E CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.1 Jan 2003 Samsung Electronics reserves the right to change products or specification without notice. Rev 1.1 Jan '03 K4S161622E 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES �	Samsung semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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