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Datasheet K4N26 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | K4N26 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) Photocoupler
K4N26
These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin package.
7.62
(Unit : mm)
0.25
FEATURES
• Switching Time - Typ. 3§Á • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio : Typ.100% |
KODENSHI KOREA CORP |
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1 | K4N26323AE-GC | 128Mbit GDDR2 SDRAM K4N26323AE-GC
128M GDDR2 SDRAM
128Mbit GDDR2 SDRAM
1M x 32Bit x 4 Banks GDDR2 SDRAM
with Differential Data Strobe and DLL
Revision 1.7 January 2003
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.7 (Jan. 2003)
K4N26323AE-GC
128M GDDR2 SDR |
Samsung |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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