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Datasheet K4N25 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | K4N25 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) Photocoupler
K4N25 • K4N25A
These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin package.
7.62 0.25
(Unit : mm)
FEATURES
• Switching Time - Typ. 3§Á • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio |
 KODENSHI KOREA CORP |
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| 3 | K4N25A | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) Photocoupler
K4N25 • K4N25A
These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION Diode and a Silicon NPN Phototransistor in a 6-pin package.
7.62 0.25
(Unit : mm)
FEATURES
• Switching Time - Typ. 3§Á • Collector-Emitter Voltage : Min.30V • Current Transfer Ratio |
KODENSHI KOREA CORP |
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| 2 | K4N25G | Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) Photocoupler
K4N25G • K4N25H
These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package.
7.62 6 5 4 0.25 6.4
DIMENSION
(Unit : mm)
0.51Min.
3.8
• TTL Compatible Output • Collector-Emitter Voltage : Min.50V • Current Tra |
KODENSHI KOREA CORP |
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| 1 | K4N25H | Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) Photocoupler
K4N25G • K4N25H
These Photocouplers cosist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package.
7.62 6 5 4 0.25 6.4
DIMENSION
(Unit : mm)
0.51Min.
3.8
• TTL Compatible Output • Collector-Emitter Voltage : Min.50V • Current Tra |
KODENSHI KOREA CORP |
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| Número de pieza | Descripción | Fabricantes | |
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