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Datasheet K4M51323LC-F Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 K4M51323LC-F   Mobile-SDRAM

K4M51323LC - S(D)N/G/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type
Samsung semiconductor
Samsung semiconductor
datasheet K4M51323LC-F pdf

K4M51323L Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
K4M51323LC-SDN

Mobile-SDRAM

K4M51323LC - S(D)N/G/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full
Samsung semiconductor
Samsung semiconductor
datasheet pdf - Samsung semiconductor
K4M51323LC-F

Mobile-SDRAM

K4M51323LC - S(D)N/G/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full
Samsung semiconductor
Samsung semiconductor
datasheet pdf - Samsung semiconductor
K4M51323LE-MC

4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4M51323LE - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page
Samsung
Samsung
datasheet pdf - Samsung


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SPS122

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