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Datasheet K4M513233E Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
7 | K4M513233E | 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA K4M513233E - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst t |
Samsung |
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6 | K4M513233E-F1H | 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA K4M513233E - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst t |
Samsung |
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5 | K4M513233E-F1L | 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA K4M513233E - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst t |
Samsung |
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4 | K4M513233E-F75 | 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA K4M513233E - M(E)C/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst t |
Samsung |
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Número de pieza | Descripción | Fabricantes | |
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