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Datasheet K4M511633E Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
8 K4M511633E   8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst
Samsung
Samsung
datasheet K4M511633E pdf
7 K4M511633E-C   8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst
Samsung
Samsung
datasheet K4M511633E-C pdf
6 K4M511633E-F1H   8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst
Samsung
Samsung
datasheet K4M511633E-F1H pdf
5 K4M511633E-F1L   8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

K4M511633E - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES • 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst
Samsung
Samsung
datasheet K4M511633E-F1L pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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