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Datasheet K4M283233H Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 K4M283233H   1M x 32Bit x 4 Banks Mobile SDRAM

K4M283233H - F(H)N/G/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 &
Samsung semiconductor
Samsung semiconductor
datasheet K4M283233H pdf

K4M2832 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
K4M283233H

1M x 32Bit x 4 Banks Mobile SDRAM

K4M283233H - F(H)N/G/L/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst
Samsung semiconductor
Samsung semiconductor
datasheet pdf - Samsung semiconductor
K4M28323PH

1M x 32Bit x 4 Banks Mobile SDRAM

K4M28323PH - F(H)E/G/C/F 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length
Samsung semiconductor
Samsung semiconductor
datasheet pdf - Samsung semiconductor


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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