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Datasheet K4H561638D-TCB3 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | K4H561638D-TCB3 | 256Mb D-die DDR Sdram 256Mb
Key Features
• Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latenc |
Samsung Semiconductor |
K4H561638D-T Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
K4H561638D-TCB0 | 128Mb DDR SDRAM |
Samsung |
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K4H561638D-TLB0 | 128Mb DDR SDRAM |
Samsung |
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K4H561638D-TCB3 | 256Mb D-die DDR Sdram |
Samsung Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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