Datasheet K4H560838N Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	K4H560838N	256Mb N-die DDR SDRAM Rev. 1.01, May. 2010 K4H560438N K4H560838N K4H561638N 256Mb N-die DDR SDRAM 66TSOP-(II) with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein	Samsung

K4H5608 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
K4H560838H	(K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification K4H560438H K4H560838H K4H561638H DDR SDRAM 256Mb H-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUM	Samsung semiconductor
K4H560838D-TCB3	256Mb D-die DDR Sdram 256Mb Key Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key pro	Samsung Semiconductor
K4H560838F-TCCC	256Mb F-die DDR400 SDRAM Specification DDR SDRAM 256Mb F-die (x8, x16) DDR SDRAM 256Mb F-die DDR400 SDRAM Specification Revision 1.1 Rev. 1.1 August. 2003 DDR SDRAM 256Mb F-die (x8, x16) 256Mb F-die Revision History Revison 1.0 (June. 2003) 1. First release Revison 1.1 (August. 2003) 1. Added x8 org (K4H560838F)	Samsung semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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