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Datasheet K4H511638D Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | K4H511638D | (K4H51xx38D) 512Mb D-die DDR SDRAM Specification K4H510438D K4H510838D K4H511638D
DDR SDRAM
512Mb D-die DDR SDRAM Specification
66 TSOP-II with Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRU |
 Samsung semiconductor |
 |
| 10 | K4H511638D-LA2 | 512Mb D-die DDR SDRAM Specification 66 TSOP-II DDR SDRAM 512Mb D-die (x8, x16)
Preliminary DDR SDRAM
512Mb D-die DDR SDRAM Specification
66 TSOP-II with Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL |
Samsung semiconductor |
|
| 9 | K4H511638D-LB0 | 512Mb D-die DDR SDRAM Specification 66 TSOP-II DDR SDRAM 512Mb D-die (x8, x16)
Preliminary DDR SDRAM
512Mb D-die DDR SDRAM Specification
66 TSOP-II with Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL |
Samsung semiconductor |
|
| 8 | K4H511638D-LB3 | 512Mb D-die DDR SDRAM Specification 66 TSOP-II DDR SDRAM 512Mb D-die (x8, x16)
Preliminary DDR SDRAM
512Mb D-die DDR SDRAM Specification
66 TSOP-II with Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL |
Samsung semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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