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Datasheet K4F160812D Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K4F160812D | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode K4F170811D, K4F160811D K4F170812D, K4F160812D
CMOS DRAM
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3. |  Samsung | cmos |
K4F Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K4F151611 | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode K4F171611D, K4F151611D K4F171612D, K4F151612D
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or + Samsung cmos | | |
| 2 | K4F151611D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode K4F171611D, K4F151611D K4F171612D, K4F151612D
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or + Samsung cmos | | |
| 3 | K4F151612D | 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode K4F171611D, K4F151611D K4F171612D, K4F151612D
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or + Samsung cmos | | |
| 4 | K4F160411D | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode K4F170411D, K4F160411D K4F170412D, K4F160412D
CMOS DRAM
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3. Samsung cmos | | |
| 5 | K4F160412D | 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode K4F170411D, K4F160411D K4F170412D, K4F160412D
CMOS DRAM
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3. Samsung cmos | | |
| 6 | K4F160811D | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode K4F170811D, K4F160811D K4F170812D, K4F160812D
CMOS DRAM
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3. Samsung cmos | | |
| 7 | K4F160812D | 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode K4F170811D, K4F160811D K4F170812D, K4F160812D
CMOS DRAM
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3. Samsung cmos | |
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