Datasheet K4150 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	K4150	MOSFET ( Transistor ) - 2SK4150 2SK4150 Silicon N Channel MOS FET High Speed Power Switching Features  Capable of 2.5 V gate drive  Low drive current  Low on-resistance RDS(on) = 4.0  typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C) Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) 321 G Absolute Maximu	Renesas Technology

K4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
K4005-01MR	MOSFET ( Transistor ) - 2SK4005-01MR This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the expres	Fuji Electric
K40H603	600V DuoPack IGBT and Diode IGBT HighspeedDuoPackIGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery anti-paralleldiode IKW40N60H3 600VDuoPackIGBTandDiode Highspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl http:// IKW40N60H3 Highspee	Infineon
K4212	MOS FIELD EFFECT TRANSISTOR To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company na	Renesas

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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