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Datasheet K4113 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | K4113 | Field Effect Transistor Silicon N Channel MOS Type 2SK4113
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV)
2SK4113
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 2.0 (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 A (VDS = 720 V) |
Toshiba |
K4 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
K4005-01MR | MOSFET ( Transistor ) - 2SK4005-01MR |
Fuji Electric |
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K40H603 | 600V DuoPack IGBT and Diode |
Infineon |
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K4212 | MOS FIELD EFFECT TRANSISTOR |
Renesas |
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Número de pieza | Descripción | Fabricantes | |
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