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Datasheet K401 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | K401 | Photocoupler Photocoupler
K401 • K402 • K404
These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Photo Darlington transistor per a channel. The K401 has one channel in a 4-pin mini-flat SMD package. The K402 has two channels in a 8-pin mini-flat SMD package. The K4 |
 KODENSHI KOREA CORP |
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| 3 | K4012 | MOSFET ( Transistor ) - 2SK4012 2SK4012
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK4012
Switching Regulator Applications
Unit: mm
z Low drain−source ON-resistance
: RDS (ON) = 0.33 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 8.5 S (typ.)
z Low leakage current
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 Toshiba Semiconductor |
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| 2 | K4013 | MOSFET ( Transistor ) - 2SK4013
2SK4013
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ)
2SK4013
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = |
Toshiba Semiconductor |
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| 1 | K4017 | MOSFET ( Transistor ) - 2SK4017 2SK4017
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III)
2SK4017
Chopper Regulator, DC-DC Converter and Motor Drive Applications
z 4-V gate drive
z Low drain−source ON-resistance: RDS (ON) = 0.07 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0 |
Toshiba Semiconductor |
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