Datasheet K3767 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	K3767	MOSFET ( Transistor ) - 2SK3767 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3767 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 3.3Ω (typ.) High forward transfer admittance: \|Yfs\| = 1.6S (typ.) Low leakage current: IDSS = 100μ	Toshiba Semiconductor

K3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
K3918	MOSFET ( Transistor ) - 2SK3918 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3918 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3918 is N-channel MOS FET device that ORDERING INFORMATION PART NUMBER 2SK3918 2SK3918-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK) features a low on-state re	NEC
K30A	MOSFET ( Transistor ) - 2SK30A Silicon Junction FETs XIAOSHENG Symbol: Drain LH03 Series of Products interconvert: 2SK30A Gate Source Silicon N-Chinnel Junction FET Application: For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC ，electronic	Xiaosheng
K3569	600V, 10A, N-Channel MOSFET - 2SK3569 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: \|Yfs\| = 8.5S (typ.) Low leakage current: IDSS = 100	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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