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Datasheet K368 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | K368 | MOSFET ( Transistor ) - 2SK368 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK368
Audio Frequency and High Voltage Amplifier Applications Constant Current Applications
2SK368
Unit: mm
· High breakdown voltage: VGDS = −100 V (min) · High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V) · Small pac |
Toshiba Semiconductor |
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4 | K3683 | MOSFET ( Transistor ) - 2SK3683
PRELIM INARY
2SK3683-01MR (500V/0.38Ω/19A)
1) Package
Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak D |
Fuji Electric |
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3 | K3686-01 | MOSFET ( Transistor ) - 2SK3686-01 2SK3686-01
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOSFET
200509
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC |
Fuji Electric |
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2 | K3687-01MR | MOSFET ( Transistor ) - 2SK3687-01MR 2SK3687-01MR
FUJI POWER MOSFET
Super FAP-G Series
200311
N-CHANNEL SILICON POWER MOSFET
Features High speed switching No secondary breadown Avalanche-proof
Low on-resistance Low driving power
Outline Drawings [mm]
TO-220F
Applications
Switching regulators
DC-DC converters
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Fuji Electric |
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Número de pieza | Descripción | Fabricantes | |
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