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Datasheet K3674 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 K3674   MOSFET ( Transistor ) - 2SK3674

2SK3674-01L,S,SJ (900V/2.0Ω/7A) 1) Package T-PACK L •E•E•ESee Page 2/4 S •E•E•ESee Page 3/4 SJ •E•E•ESee Page 4/4 PRELIMINARY 2) Absolute Maximum Ratings (Tc=25• Ž • @ Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage www.DataShee
 Fuji Electric
Fuji Electric		 datasheet K3674 pdf

K3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
K3918

MOSFET ( Transistor ) - 2SK3918

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3918 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3918 is N-channel MOS FET device that ORDERING INFORMATION PART NUMBER 2SK3918 2SK3918-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK) features a low on-state re
 NEC
NEC		 datasheet pdf - NEC
K30A

MOSFET ( Transistor ) - 2SK30A

Silicon Junction FETs XIAOSHENG Symbol: Drain LH03 Series of Products interconvert: 2SK30A Gate Source Silicon N-Chinnel Junction FET „ Application: For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC ，electronic
 Xiaosheng
Xiaosheng		 datasheet pdf - Xiaosheng
K3569

600V, 10A, N-Channel MOSFET - 2SK3569

2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100
Toshiba Semiconductor
Toshiba Semiconductor		 datasheet pdf - Toshiba Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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