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Datasheet K365 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
3 K365   MOSFET ( Transistor ) - 2SK365

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications 2SK365 Unit: mm · High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) · Low RDS (ON)
Toshiba Semiconductor
Toshiba Semiconductor
datasheet K365 pdf
2 K3652   N-channel enhancement mode MOSFET

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3652 N-channel enhancement mode MOSFET 3.3±0.3Product lifecyclennuaen ■ Features • Low on-resistance, low Qg • High avalanche resistance ■ Applications • For PDP • For high-speed switching ■ Absolute Ma
Panasonic
Panasonic
datasheet K3652 pdf
1 K3659   MOSFET ( Transistor ) - 2SK3659

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3659 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/D
NEC
NEC
datasheet K3659 pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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