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Datasheet K349 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | K349 | Silicon N-Channel MOSFET |
 Hitachi |
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| 3 | K3491 | MOSFET ( Transistor ) - 2SK3491 Ordering number : ENN6959
Features
• Low ON-resistance. • Low Qg.
2SK3491
N-Channel Silicon MOSFET
2SK3491
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm 2083B
[2SK3491] 6.5 5.0 2.3 4 0.5
5.5 1.5 7.0
0.85 0.7
0.6 12 3
2.3 2.3
0.8 1.6 7.5
1.2
0.5
1 : Gate 2 : Drain 3 |
 Sanyo Semicon Device |
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| 2 | K3497 | MOSFET ( Transistor ) - 2SK3497
2SK3497
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3497
High Power Amplifier Application
Unit: mm
High breakdown voltage: VDSS = 180V Complementary to 2SJ618
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source vo |
 Toshiba |
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| 1 | K3498 | MOSFET ( Transistor ) - 2SK3498 2SK3498
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3498
DC-DC Converter, Relay Drive and Motor Drive Applications
• • • • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) High forward transfer admittance: Yfs = 0.6 S (typ.) Low leakage current: ID |
 Toshiba Semiconductor |
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