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Datasheet K3365 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 K3365   MOSFET ( Transistor ) - 2SK3365

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3365 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID
NEC
NEC
datasheet K3365 pdf

K3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
K3918

MOSFET ( Transistor ) - 2SK3918

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3918 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3918 is N-channel MOS FET device that ORDERING INFORMATION PART NUMBER 2SK3918 2SK3918-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK) features a low on-state re
NEC
NEC
datasheet pdf - NEC
K30A

MOSFET ( Transistor ) - 2SK30A

Silicon Junction FETs XIAOSHENG Symbol: Drain LH03 Series of Products interconvert: 2SK30A Gate Source Silicon N-Chinnel Junction FET „ Application: For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC ,electronic
Xiaosheng
Xiaosheng
datasheet pdf - Xiaosheng
K3569

600V, 10A, N-Channel MOSFET - 2SK3569

2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100
Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf - Toshiba Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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