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Datasheet K319 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | K319 | MOSFET ( Transistor ) - 2SK319 INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK319
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Fast Switching Speed
APPLICATIONS ·High speed power Switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
V |
 Inchange Semiconductor |
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| 3 | K319 | MOSFET ( Transistor ) - 2SK319 |
 Hitachi Semiconductor |
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| 2 | K3192 | MOSFET ( Transistor ) - 2SK3192 Power MOSFETs
2SK3192
Silicon N-channel power MOSFET
Unit: mm
(0.7)
■ Features
• Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown
15.0±0.3 11.0±0.2
5.0±0.2 (3.2)
21.0±0.5
φ 3.2±0.1
15.0±0.2
■ Applications
• PDP |
 Panasonic Semiconductor |
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| 1 | K3199 | MOSFET ( Transistor ) - 2SK3199 2SK3199
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 500 ± 30 ±5 ± 20 30 (Tc = 25ºC) 35 5 150 –55 to +150
External dimensions 1 ...... FM20
(Ta = 25ºC)
Electrical Characteristics
Symbol V(BR) DSS I GSS I DSS VTH Re (yfs) RDS |
 Sanken Electric |
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