Datasheet K3078 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	K3078	SILICON N CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR 2SK3078 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3078 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor war	Toshiba Semiconductor

K3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
K3918	MOSFET ( Transistor ) - 2SK3918 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3918 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3918 is N-channel MOS FET device that ORDERING INFORMATION PART NUMBER 2SK3918 2SK3918-ZK PACKAGE TO-251 (MP-3) TO-252 (MP-3ZK) features a low on-state re	NEC
K30A	MOSFET ( Transistor ) - 2SK30A Silicon Junction FETs XIAOSHENG Symbol: Drain LH03 Series of Products interconvert: 2SK30A Gate Source Silicon N-Chinnel Junction FET Application: For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC ，electronic	Xiaosheng
K3569	600V, 10A, N-Channel MOSFET - 2SK3569 2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: \|Yfs\| = 8.5S (typ.) Low leakage current: IDSS = 100	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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