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Datasheet K304 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | K304 | Silicon N Channel Junction FETs Silicon N Channel Junction FETs
LH03 series of products interconvertible
2SK304
2SK304
D Symbol
Applications For charge sensor, meter amplifier circuit,
rheostat , chopper and gain controller for AGC, electronic switch.
Electrical characteristics (Ta=25℃)
SG
Packag
1-Source 2-Gate 3-Drain TO- |
 Kesailun Elctronic |
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| 3 | K304 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) Photocoupler
K301 • K302 • K304
These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Photo Darlington transistor per a channel. The K301 has one channel in a 4-pin mini-flat SMD package. The K302 has two channels in a 8-pin mini-flat SMD package. The K304 |
 KODENSHI KOREA CORP |
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| 2 | K3047 | MOSFET ( Transistor ) - 2SK3047 Power F-MOS FETs
2SK3047
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 25ns q No secondary breakdown
unit: mm
9.9±0.3 4.6±0.2 2.9±0.2
s Applications
q Contactless relay q Diving circuit for |
 Panasonic Semiconductor |
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| 1 | K3048 | MOSFET ( Transistor ) - 2SK3048 Power F-MOS FETs
2SK3048
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
unit: mm
9.9±0.3 4.6±0.2 2.9±0.2
s Applications
q Contactless relay q Diving circuit for a soleno |
Panasonic Semiconductor |
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