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Datasheet K193 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | K193 | N-Channel FET (2SK193) |
 NEC |
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| 3 | K1930 | MOSFET ( Transistor ) - 2SK1930 2SK1930
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
2SK1930
Chopper Regulator, DC−DC Converter, and Motor Drive Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) l High forward transfer admittance : |Yfs| = 2.0 S (typ.) l Low leak |
 Toshiba Semiconductor |
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| 2 | K1933 | MOSFET ( Transistor ) - 2SK1933 2SK1933
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator
Outline
TO-3P
D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source
S
2SK1933
Absolute Maximum Ratings (Ta = |
 Hitachi Semiconductor |
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| 1 | K1938 | MOSFET ( Transistor ) - 2SK1938 INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1938
DESCRIPTION ·Drain Current –ID=18A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Fast Switching Speed
APPLICATIONS ·Switching regulator ·UPS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATI |
 Inchange Semiconductor |
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