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Datasheet K118 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | K118 | MOSFET ( Transistor ) - 2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK118
General Purpose and Impedance Converter and Condenser Microphone Applications
2SK118
Unit: mm
• High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB ( |
 Toshiba Semiconductor |
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| 1 | K1181 | MOSFET ( Transistor ) - 2SK1181 2SK1181
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) PD EAS * Tch Tstg Ratings 500 ± 20 ± 13 ± 52 (Tch 150ºC)
(Ta = 25ºC)
External dimensions 2 ...... FM100
Electrical Characteristics
Symbol V(BR) DSS I GSS I DSS VTH Re (yfs) RDS (on) Ciss Coss t on t off 2.0 8.5 13 0.35 2700 350 65 |
 Sanken electric |
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| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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