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Datasheet K117 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | K117 | MOSFET ( Transistor ) - 2SK117 2SK117
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK117
Low Noise Audio Amplifier Applications
• • • • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) High breakdown voltage: VGDS = −50 V Low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 |
Toshiba Semiconductor |
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1 | K1170 | MOSFET ( Transistor ) - 2SK1170
2SK1169, 2SK1170
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D G 1 2 3 1. Gat |
Hitachi Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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