|
|
Datasheet K117 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | K117 | MOSFET ( Transistor ) - 2SK117 2SK117
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK117
Low Noise Audio Amplifier Applications
• • • • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) High breakdown voltage: VGDS = −50 V Low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 |
 Toshiba Semiconductor |
 |
| 1 | K1170 | MOSFET ( Transistor ) - 2SK1170
2SK1169, 2SK1170
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D G 1 2 3 1. Gat |
 Hitachi Semiconductor |
|
| Esta página es del resultado de búsqueda del K117. Si pulsa el resultado de búsqueda de K117 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |