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Datasheet IS42S32800 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IS42S32800 | 2M Words x 32 Bits x 4 Banks (256-Mbit) Synchronous DRAM IS42S32800
2M Words x 32 Bits x 4 Banks (256-Mbit) Synchronous DRAM
P JANUARY 2008
FEATURES
• Concurrent auto precharge • Clock rate:166/143 MHz • Fully synchronous operation • Internal pipelined architecture • Four internal banks (2M x 32bit x 4bank) • Programmable Mode CAS# |
 ISSI |
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| 4 | IS42S32800B | SYNCHRONOUS DYNAMIC RAM IS42S32800B
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
FEATURES
· Concurrent auto precharge · Clock rate:166/143 MHz · Fully synchronous operation · Internal pipelined architecture · Four internal banks (2M x 32bit x 4bank) · Programmable Mode -CAS#Latency:2 or 3 -Burst Le |
 Integrated Silicon Solution |
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| 3 | IS42S32800D | 8M x 32 256Mb SYNCHRONOUS DRAM IS42S32800D IS45S32800D
8M x 32 256Mb SYNCHRONOUS DRAM APRIL 2009
FEATURES
• Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.3V • |
Integrated Silicon Solution |
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| 2 | IS42S32800G | 256Mb SYNCHRONOUS DRAM IS42S32800G IS45S32800G
8M x 32
256Mb SYNCHRONOUS DRAM
AUGUST 2012
FEATURES
• Clock frequency: 200, 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single Power supply: 3.3V + 0.3V
• LVTTL interf |
ISSI |
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