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Datasheet IRLML6401 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IRLML6401 | P-CHANNEL MOSFET IRLML6401
Rev.D Nov.-2015
DATA SHEET
AO / Descriptions SOT-23 塑封封装 P 道 MOS 场效应管。P- CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features
低导通电阻，开关时间快，低导通电压。 Ultra Low on-resistance. fast switching.1.8V gate rated.
用途 / Applicati |
 BLUE ROCKET ELECTRONICS |
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| 4 | IRLML6401 | Power MOSFET ( Transistor ) Plastic-Encapsulate Mosfets
IRLML6401
l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching l 1.8V Gate Rated l Lead-Free l Halogen-Free l Marking: 1F
* 6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C ID |
 HOTTECH |
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| 3 | IRLML6401 | P-Channel Enhancement MOSFET SMD Type P-Channel Enhancement MOSFET
IRLML6401 (KRLML6401)
MOSFET
■ Features
● Ultra low on-resistance. ● P-Channel MOSFET. ● Fast switching.
+0.12.4 - 0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12 0.95 +0.1
-0.1
1.9 +0.1 -0.1
0-0.1 +0.10.38
- 0.1
+0.10.97 -0.1
+1.3 0.1 - 0.1
0.55 0.4
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 Kexin |
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| 2 | IRLML6401 | HEXFET Power MOSFET PD - 93756D
IRLML6401
l l l l l l l
Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching 1.8V Gate Rated
HEXFET® Power MOSFET
G 1
VDSS = -12V
3 D S 2
RDS(on) = 0.05Ω
Description
These P-Channel MOSFETs from International Re |
 International Rectifier |
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| Número de pieza | Descripción | Fabricantes | |
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