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Datasheet IRLML6302 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
3 IRLML6302   HEXFET Power MOSFET

PD - 91259G HEXFET® Power MOSFET l l l l l l l IRLML6302 VDSS = -20V Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching G 1 3 D S 2 RDS(on) = 0.60Ω Description Fifth Generation HEXFETs from Internat
International Rectifier
International Rectifier
datasheet IRLML6302 pdf
2 IRLML6302PBF   HEXFET Power MOSFET

PD - 94947A IRLML6302PbF l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching Lead-Free HEXFET® Power MOSFET D VDSS = -20V G S RDS(on) = 0.60Ω Description Fifth Generation HEXFETs fr
International Rectifier
International Rectifier
datasheet IRLML6302PBF pdf
1 IRLML6302PBF-1   Power MOSFET ( Transistor )

VDS RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -20 0.60 2.4 -0.78 V Ω nC A IRLML6302PbF-1 HEXFET® Power MOSFET G1 S2 3D Micro3TM Features Industry-standard pinout SOT-23 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qua
International Rectifier
International Rectifier
datasheet IRLML6302PBF-1 pdf


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Número de pieza Descripción Fabricantes PDF
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