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Datasheet IRLIZ34N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | IRLIZ34N | Power MOSFET ( Transistor ) PD - 9.1329B
IRLIZ34N
HEXFET® Power MOSFET
l l l l l l
Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
D
VDSS = 55V
G S
RDS(on) = 0.035Ω ID = 22A
Description
Fifth Generation H |
International Rectifier |
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1 | IRLIZ34NPBF | HEXFET Power MOSFET PD - 95455
IRLIZ34NPbF
Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description
l l
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 0.035Ω
G S
ID = 22A
Fifth |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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