Datasheet IRLI530NPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRLI530NPBF	HEXFET Power MOSFET IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description l PD - 95635 HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.10Ω G S ID = 12A Fifth	International Rectifier

IRLI530N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRLI530N	HEXFET Power MOSFET PD - 9.1350B PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l IRLI530N HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.10Ω G	International Rectifier
IRLI530NPBF	HEXFET Power MOSFET IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description l PD - 95635 HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.10Ω	International Rectifier

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