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Datasheet IRLI530N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRLI530N | HEXFET Power MOSFET PD - 9.1350B
PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description
l l
IRLI530N
HEXFET® Power MOSFET
D
VDSS = 100V RDS(on) = 0.10Ω
G
ID = 12A
S
Fifth |
 International Rectifier |
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| 1 | IRLI530NPBF | HEXFET Power MOSFET IRLI530NPbF
Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description
l
PD - 95635
HEXFET® Power MOSFET
D
VDSS = 100V RDS(on) = 0.10Ω
G S
ID = 12A
Fifth |
International Rectifier |
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