Datasheet IRLI530G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRLI530G	Power MOSFET ( Transistor ) Power MOSFET IRLI530G, SiHLI530G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5.0 V 28 3.8 14 Single 0.16 TO-220 FULLPAK D G GDS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Isolated Pa	Vishay

IRLI5 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRLI520N	Power MOSFET ( Transistor ) PD - 9.1496A PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l IRLI520N HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.18Ω G	International Rectifier
IRLI520NPBF	Power MOSFET ( Transistor ) PD - 95049 IRLI520NPbF • Lead-Free www.irf.com 1 2/25/04 IRLI520NPbF 2 www.irf.com IRLI520NPbF www.irf.com 3 IRLI520NPbF 4 www.irf.com IRLI520NPbF www.irf.com 5 IRLI520NPbF 6 www.irf.com IRLI520NPbF www.irf.com 7 IRLI520NPbF 8 www.irf.com IRLI520NPbF TO	International Rectifier
IRLI540N	HEXFET Power MOSFET PD - 9.1497A PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l IRLI540N HEXFET® Power MOSFET D VDSS = 100V	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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