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Datasheet IRL620S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRL620S | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRL620S
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.6 |
 Fairchild Semiconductor |
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| 3 | IRL620S | Power MOSFET ( Transistor ) Previous Datasheet
Index
Next Data Sheet
PD -9.1218
IRL620S
HEXFET® Power MOSFET
Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at VGS=4V & 5V Fast Switching Description
Third Generation HEXFETs from International |
 International Rectifier |
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| 2 | IRL620S | Power MOSFET ( Transistor ) Power MOSFET
IRL620S, SiHL620S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
200 VGS = 10 V
16
Qgs (nC)
2.9
Qgd (nC)
9.6
Configuration
Single
0.80
D2PAK (TO-263)
D
GD S
G
S N-Channel MOSFET
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • S |
 Vishay |
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| 1 | IRL620SPBF | HEXFET Power MOSFET PD- 95591
IRL620SPbF
Lead-Free
www.irf.com
1
07/21/04
IRL620SPbF
2
www.irf.com
IRL620SPbF
www.irf.com
3
IRL620SPbF
4
www.irf.com
IRL620SPbF
www.irf.com
5
IRL620SPbF
6
www.irf.com
IRL620SPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considera |
International Rectifier |
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