Datasheet IRL610A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRL610A	Advanced Power MOSFET $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON):1.185Ω (Typ.) 1 2 3 IRL610A BVDSS = 200 V RD	Fairchild Semiconductor

IRL6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRL630	Power MOSFET ( Transistor ) Previous Datasheet Index Next Data Sheet PD -9.1255 IRL630 HEXFET ® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(ON) Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling Description Third Gener	International Rectifier
IRL6372PBF	HEXFET Power MOSFET PD - 97622 IRL6372PbF VDS VGS RDS(on) max (@VGS = 4.5V) 30 ±12 17.9 11 8.1 V V mΩ nC A 6 * 6 * HEXFET® Power MOSFET ' ' ' ' Qg (typical) ID (@TA = 25°C) SO-8 Applications • Battery operated DC motor inverter MOSFET • System/Load Switch �	International Rectifier
IRL640	Power MOSFET ( Transistor )	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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