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Datasheet IRL540 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | IRL540 | Power MOSFET ( Transistor ) |
 International Rectifier |
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| 10 | IRL540 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.046Ω (Typ.)
Absolute Maximum Ratings
Sym |
 Fairchild Semiconductor |
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| 9 | IRL540 | Power MOSFET ( Transistor ) Power MOSFET
IRL540, SiHL540
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
100 VGS = 5.0 V
64
Qgs (nC)
9.4
Qgd (nC)
27
Configuration
Single
0.077
TO-220AB
D
S D G
G
S N-Channel MOSFET
FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Le |
 Vishay Siliconix |
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| 8 | IRL540A | Advanced Power MOSFET $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.046Ω (Typ.)
1 2 3
IRL540A
BVDSS = 100 V R |
 Fairchild |
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