Datasheet IRL530A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRL530A	Advanced Power MOSFET Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.101Ω (Typ.) IRL530A BVDSS = 100 V RDS(on) = 0.12Ω ID	Fairchild

IRL5 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRL530	Power MOSFET ( Transistor ) IRL530, SiHL530 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 28 3.8 14 Single D FEATURES 100 0.16 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive •R DS(on) Spe	Vishay
IRL530	Power MOSFET ( Transistor )	International Rectifier
IRL540N	100V, 30A, 94W, HEXFET Power MOSFET Previous Datasheet Index Next Data Sheet PD - 9.1495 PRELIMINARY l l l l l l IRL540N HEXFET® Power MOSFET D Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VD	IRF

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Número de pieza	Descripción	Fabricantes	PDF
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