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Datasheet IRL530 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | IRL530 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.101Ω (Typ.)
Absolute Maximum Ratings
Sym |
 Fairchild Semiconductor |
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| 10 | IRL530 | Power MOSFET ( Transistor ) |
 International Rectifier |
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| 9 | IRL530 | Power MOSFET ( Transistor ) IRL530, SiHL530
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 28 3.8 14 Single
D
FEATURES
100 0.16
• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive •R DS(on) Specified at VGS = 4 V |
 Vishay |
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| 8 | IRL530A | Advanced Power MOSFET Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.101Ω (Typ.)
IRL530A
BVDSS = 100 V RDS(on) = 0.12Ω ID |
 Fairchild |
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