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Datasheet IRL2910 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | IRL2910 | HEXFET Power MOSFET PD - 91375B
IRL2910
HEXFET® Power MOSFET
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
D
VDSS = 100V RDS(on) = 0.026Ω
G
ID = 55A
S
Fifth Generation H |
International Rectifier |
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3 | IRL2910LPbF | HEXFET Power MOSFET PD - 95149
IRL2910S/LPbF
l Logic-Level Gate Drive
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
l Lead-Free Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq |
International Rectifier |
|
2 | IRL2910PBF | Power MOSFET ( Transistor ) • Lead-Free
PD - 94993
IRL2910PbF
www.irf.com
1 2/10/04
IRL2910PbF
2 www.irf.com
IRL2910PbF
www.irf.com
3
IRL2910PbF
4 www.irf.com
IRL2910PbF
www.irf.com
5
IRL2910PbF
6 www.irf.com
IRL2910PbF
www.irf.com
7
IRL2910PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (in |
International Rectifier |
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1 | IRL2910SPbF | HEXFET Power MOSFET PD - 95149
IRL2910S/LPbF
l Logic-Level Gate Drive
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
l Lead-Free Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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