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Datasheet IRHN7250 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRHN7250 | (IRHN7250 / IRHN8250) TRANSISTOR N-CHANNEL
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Provisional Data Sheet PD 9.679C
REPETITIVE AVALANCHE AND dv/dt RATED
IRHN7250 IRHN8250
N-CHANNEL
HEXFET® TRANSISTOR
200 Volt, 0.10Ω , MEGA RAD HARD HEXFET
International Rectifier’s MEGA RAD HARD technology HEXFET power MOSFETs |
 International Rectifier |
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| 1 | IRHN7250SE | RADIATION HARDENED POWER MOSFET PD - 91780B
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
IRHN7250SE 200V, N-CHANNEL
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary Part Number Radiation Level RDS(on) IRHN7250SE 100K Rads (Si) 0.10Ω
ID 26A
International Rectifier’s RADHardTM HEXFET® MOSFET technology provides hig |
International Rectifier |
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