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Datasheet IRGPS40B120U Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRGPS40B120U | INSULATED GATE BIPOLAR TRANSISTOR PD- 94295B
IRGPS40B120U
INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT
C
Features
• Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Super-247 Package.
VCES = 1200V VCE(on) typ. = 3.12V
G E
@ VGE = 15 |
 IRF |
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| 3 | IRGPS40B120UD | Insulated Gate Bipolar Transistor
PD- 94240A
IRGPS40B120UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast Co-Pack IGBT
VCES = 1200V VCE(on) typ. = 3.12V
Features
• Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. � |
 International Rectifier |
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| 2 | IRGPS40B120UDP | Insulated Gate Bipolar Transistor
PD- 95967
IRGPS40B120UDP
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positi |
International Rectifier |
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| 1 | IRGPS40B120UP | INSULATED GATE BIPOLAR TRANSISTOR www.DataSheet4U.net
PD- 95899A
IRGPS40B120UP
INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT
Features
• Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Super-247 Package. • Lead-Free
C
VCES = 1200V VC |
International Rectifier |
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