Datasheet IRGP6650DPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRGP6650DPBF	Insulated Gate Bipolar Transistor VCES = 600V IC = 50A, TC =100°C IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 35A Applications  Welding  H Bridge Converters G E n-channel G Gate E C G IR	International Rectifier

IRGP6650D Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRGP6650D-EPbF	Insulated Gate Bipolar Transistor VCES = 600V IC = 50A, TC =100°C IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 35A Applications  Welding  H Bridge Converters G E n-chan	International Rectifier
IRGP6650DPBF	Insulated Gate Bipolar Transistor VCES = 600V IC = 50A, TC =100°C IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 35A Applications  Welding  H Bridge Converters G E n-chan	International Rectifier

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