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Datasheet IRGBC30U Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRGBC30U | INSULATED GATE BIPOLAR TRANSISTOR PD - 9.682A
IRGBC30U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
G E C
UltraFast IGBT
VCES = 600V VCE(sat) ≤ 3.0V
@VGE = 15V, I C = 12A
n-channe |
 International Rectifier |
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| 1 | IRGBC30UD2 | INSULATED GATE BIPOLAR TRANSISTOR Previous Datasheet
Index
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PD - 9.796A
IRGBC30UD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) See Fig. |
International Rectifier |
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