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Datasheet IRGB420 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRGB420 | INSULATED GATE BIPOLAR TRANSISTOR PD - 9.784A
IRGB420U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
G E C
UltraFast IGBT
VCES = 500V VCE(sat) ≤ 3.0V
@VGE = 15V, I C = 7.5A
n-chann |
 International Rectifier |
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| 2 | IRGB420U | INSULATED GATE BIPOLAR TRANSISTOR PD - 9.784A
IRGB420U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
G E C
UltraFast IGBT
VCES = 500V VCE(sat) ≤ 3.0V
@VGE = 15V, I C = 7.5A
n-chann |
International Rectifier |
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| 1 | IRGB420UD2 | INSULATED GATE BIPOLAR TRANSISTOR PD - 9.1066
IRGB420UD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating f requency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
C
UltraF |
International Rectifier |
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