Datasheet IRG8P15N120KDPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRG8P15N120KDPBF	INSULATED GATE BIPOLAR TRANSISTOR IRG8P15N120KDPbF IRG8P15N120KD-EPbF VCES = 1200V IC = 15A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.7V @ IC = 10A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding Fea	International Rectifier

IRG8P15N120KD Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRG8P15N120KDPbF	INSULATED GATE BIPOLAR TRANSISTOR IRG8P15N120KDPbF IRG8P15N120KD-EPbF VCES = 1200V IC = 15A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.7V @ IC = 10A Applications • Industrial Motor Drive • UPS • Solar Inver	International Rectifier
IRG8P15N120KD-EPbF	INSULATED GATE BIPOLAR TRANSISTOR IRG8P15N120KDPbF IRG8P15N120KD-EPbF VCES = 1200V IC = 15A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.7V @ IC = 10A Applications • Industrial Motor Drive • UPS • Solar Inver	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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