Datasheet IRG7PH37K10DPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRG7PH37K10DPBF	INSULATED GATE BIPOLAR TRANSISTOR IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 25A, TC =100°C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.9V @ IC = 15A G E C G G n-channel Applications • Industrial Motor Drive • UPS G Gate G IRG7	International Rectifier

IRG7PH37K10D Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRG7PH37K10DPBF	INSULATED GATE BIPOLAR TRANSISTOR IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 25A, TC =100°C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.9V @ IC = 15A G E C G G n-channel Applications • Industrial Motor Drive �	International Rectifier
IRG7PH37K10D-EPBF	INSULATED GATE BIPOLAR TRANSISTOR IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 25A, TC =100°C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.9V @ IC = 15A G E C G G n-channel Applications • Industrial Motor Drive �	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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