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Datasheet IRG7PH35U-EP Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | IRG7PH35U-EP | INSULATED GATE BIPOLAR TRANSISTOR PD - 97479
INSULATED GATE BIPOLAR TRANSISTOR Features
• • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution L |
 International Rectifier |
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| 1 | IRG7PH35U-EP | INSULATED GATE BIPOLAR TRANSISTOR PD - 97479
INSULATED GATE BIPOLAR TRANSISTOR Features
• • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution L |
International Rectifier |
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