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Datasheet IRG4RC10S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRG4RC10S | INSULATED GATE BIPOLAR TRANSISTOR PD - 91732A
IRG4RC10S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Extremely low voltage drop; 1.0V typical at 2A, 100°C • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher |
 International Rectifier |
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| 2 | IRG4RC10SD | INSULATED GATE BIPOLAR TRANSISTOR |
International Rectifier |
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| 1 | IRG4RC10SDPBF | Standard Speed CoPack IGBT PD - 95192A
IRG4RC10SDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Extremely low voltage drop 1.1V(typ) @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Tight parameter di |
International Rectifier |
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| Número de pieza | Descripción | Fabricantes | |
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