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Datasheet IRG4PH50U Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | IRG4PH50U | INSULATED GATE BIPOLAR TRANSISTOR PD - 91574B
IRG4PH50U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimize |
IRF |
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3 | IRG4PH50UD | INSULATED GATE BIPOLAR TRANSISTOR PD 91573A
IRG4PH50UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than |
IRF |
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2 | IRG4PH50UDPBF | INSULATED GATE BIPOLAR TRANSISTOR
PD -95190
IRG4PH50UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution an |
International Rectifier |
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1 | IRG4PH50UPbF | Ultra Fast Speed IGBT PD - 95191
IRG4PH50UPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimi |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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