Datasheet IRG4PH40UD2PBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRG4PH40UD2PBF	Insulated Gate Bipolar Transistor PD - 95570 IRG4PH40UD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter parameter distribution and higher efficiency t	IRF

IRG4PH40UD2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRG4PH40UD2-E	Insulated Gate Bipolar Transistor PD - 96781 IRG4PH40UD2-E Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ul	IRF
IRG4PH40UD2	Insulated Gate Bipolar Transistor PD - 94739 IRG4PH40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter parameter distribution and hi	IRF
IRG4PH40UD2PBF	Insulated Gate Bipolar Transistor PD - 95570 IRG4PH40UD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter parameter distribution and	IRF

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Número de pieza	Descripción	Fabricantes	PDF
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